NTB13N10
Power MOSFET
100 V, 13 A, N?Channel
Enhancement?Mode D 2 PAK
Features
? Source?to?Drain Diode Recovery Time Comparable to a Discrete
http://onsemi.com
?
?
?
?
Fast Recovery Diode
Avalanche Energy Specified
I DSS and R DS(on) Specified at Elevated Temperature
Mounting Information Provided for the D 2 PAK Package
Pb?Free Packages are Available
V (BR)DSS
100 V
R DS(on) TYP
165 m W @ 10 V
N?Channel
I D MAX
13 A
Typical Applications
? PWM Motor Controls
? Power Supplies
? Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
D
S
Rating
Drain?to?Source Voltage
Symbol
V DSS
Value
100
Unit
V
Drain?to?Source Voltage (R GS = 1.0 M W )
V DGR
100
V
4
D 2 PAK
Gate?to?Source Voltage
? Continuous
? Non?Repetitive (t p v 10 ms)
V GS
V GSM
" 20
" 30
V
1
2
3
CASE 418AA
STYLE 2
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Pulsed (Note 1)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 V, V GS = 10 V, I L(pk) = 13 A,
L = 1.0 mH, R G = 25 W )
I D
I D
I DM
P D
T J , T stg
E AS
13
8.0
39
64.7
0.43
?55 to
+175
85
A
W
W/ ° C
° C
mJ
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
13N10G
AYWW
Thermal Resistance
° C/W
? Junction?to?Case
R q JC
2.32
1
2
3
Maximum Lead Temperature for Soldering
Purposes, (1/8 ″ from case for 10 s)
T L
260
° C
Gate
Drain
Source
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
13N10
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 6
1
Publication Order Number:
NTB13N10/D
相关PDF资料
NTB23N03RT4G MOSFET PWR N-CHAN 25V 23A D2PAK
NTB25P06G MOSFET P-CH 60V 27.5A D2PAK
NTB30N06T4 MOSFET N-CH 60V 27A D2PAK
NTB30N20T4G MOSFET N-CH 200V 30A D2PAK
NTB35N15T4 MOSFET N-CH 150V 37A D2PAK
NTB52N10T4G MOSFET N-CH 100V 52A D2PAK
NTB5405NG MOSFET N-CH 40V 116A D2PAK
NTB5411NT4G MOSFET N-CH 60V 80A D2PAK
相关代理商/技术参数
NTB-1401 制造商:QUEST TECHNOLOGY 功能描述:IVORY 4C RJ-11 SINGLE SURFACE BOX
NTB-1402 制造商:Quest Tech. 功能描述:Conn RJ-11 F 4 POS ST Cable Mount 4 Terminal 1 Port
NTB-1441 制造商:Quest Technology International Inc 功能描述:
NTB1528AS 制造商:IKO NIPPON THOMPSON 功能描述:AXL NDL RLR 15MM
NTB-1603 制造商:Quest Technology International Inc 功能描述:
NTB-1803 制造商:Quest Technology International Inc 功能描述:
NTB18N06 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB18N06G 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube